Temperature and injection current dependence of electroluminescence intensity in green and blue InGaN single-quantum-well light-emitting diodes
نویسندگان
چکیده
منابع مشابه
Anomalous temperature dependence of electroluminescence intensity in InGaN single quantum well diodes
Temperature dependence of electroluminescence (EL) spectral intensity of the super-bright green InGaN single quantum well (SQW) light emitting diodes (LED’s), fabricated by Nichia Chemical Industry Ltd, has been studied over a wide temperature range (T = 15-300 K) and as a function of injection current level. It is found that, when T is decreased slightly to 140 K, the EL intensity efficiently ...
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Temperature dependence of electroluminescence (EL) spectral intensity of the super-bright blue InGaN single quantum well (SQW) light emitting diodes (LED’s) has been carefully investigated over a wide temperature range (T = 15-300 K) and as a function of injection current level (0.1-10 mA) in comparison with high quality GaAs SQW-LED’s. When T is slightly decreased to 180 K, the EL intensity ef...
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Temperature and injection current dependence of electroluminescence (EL) spectral intensity of the super-bright InGaN single quantum well (SQW) light emitting diodes (LED’s) has been carefully investigated over a wide temperature range (T = 15-300 K) and as a function of injection current level (0.1-10 mA). It is found that, when T is decreased slightly to 140 K, the EL intensity efficiently in...
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